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^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C * * * * * * * New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150C operating temperature FullPak isolates 2.5 kV AC (1 min.) P-TO-220-3-1 (TO-220AB) G E P-TO-220-3-31 (TO-220 FullPak) P-TO-263-3-2 (D2-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter VCE 600V 600V 600V 600V IC 3.0A 3.0A 3.0A 3.0A VCE(sat),Tj=25C 2.9V 2.9V 2.9V 2.9V Tj,max 150C 150C 150C 150C Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 Value ILA03N60 600 3 2.2 9 5.5 4 2.2 9 5.5 0.32 30 1 16.5 1 Ordering Code Q67040-S4626 Q67040-S4628 Q67040-S4627 Q67040-S4625 Symbol VCE TC = 25C TC = 100C IC ICpuls IF IFpuls EAS VGE dv/dt Ptot Tstg Ts Others 4.5 3 Unit V A Collector-emitter voltage DC collector current Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC 3A, VCE 450V, Tjmax 150C Power dissipation (TC = 25C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J-STA-020A) 4 2.5 mJ V V/ns 27 W C -55...+150 D-Pak Others 255 220 Reverse diode of transistor is commutated with same device according to figure C. With application relevant values IC 1.5A, CSnubber = 1 nF and RG 50, dv/dt of the reverse diode is within its specification. 1 Power Semiconductors 1 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 Symbol RthJC RthJCD Conditions P-TO-220-3-31 Other packages TO-220-3-31 Other packages P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 1 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Therm. resistance, junction - ambient R t h J A SMD version, device on PCB: @ min. footprint @ 6cm2 cooling area1 @ min. footprint @ 6cm cooling area 2 Max. Value 7.6 4.7 12 10 65 62 75 50 62 40 Unit K/W RthJA Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter avalanche breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 5mA V(BR)CE VCE(sat) V G S = 0V; I C = 0. 4A V G E = 1 0V, I C = 3. 0A T j = 25 C T j = 15 0 C V G E = 1 0V, I C = 0. 8A T j = 25 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 3. 0A T j = 25 C T j = 15 0 C V G E = 0V, I F = 0. 8A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage VGE(th) I C = 30 A ,V C E =V G E 2.1 1.0 1.0 3.0 3.9 V 1.5 1.6 V 1.8 1.5 1.5 2.3 2.7 2.9 600 850 V Symbol Conditions Value min. typ. max. Unit 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Power Semiconductors 2 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 continued Value min. typ. 1 1.5 max. 20 250 100 nA S Unit A Symbol ICES Conditions V C E = 600V , V G E = 0V T j = 25 C T j = 15 0 C Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Zero gate voltage collector current Gate-emitter leakage current Transconductance Capacities, Gate Charge, at Tj=25 C Parameter Input capacitance Output capacitance Reverse transfer capacitance Effective Output Capacitance (Energy related) Gate to emitter charge Gate to collector charge Gate total charge Gate plateau voltage Gate to emitter charge Gate to collector charge Gate total charge Gate plateau voltage IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 3. 0A Symbol Ciss Coss Crss Co(er) QGE QGC QG Vm QGE QGC QG Vm Conditions V C E = 25V, V G E = 0V, f= 1 M Hz V G E = 0V, V C E = 0V t o 4 80 V V C E = 400V , I C = 3. 0A , V G E = 1 0V Value min. typ. 110 6 4 3.7 1 5.5 8.5 6.5 0.5 4.0 8 3.5 max. - Unit pF pF nC V nC V C E = 400V , I C = 0. 8A , V G E = 1 0V V Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) tr td(off) tf Eon 3 Symbol Conditions Value min. typ. 15 35 100 100 12 20 8 max. - Unit Eoff Eoff V C C = 4 00V, I C = 0. 8A , V G E = 0/ 1 0V , R G = 6 0 , C S n u b b e r = 0nF (C S n u b b e r : S n u bb er c apac it or ) C S n u b b e r = 1nF ns J 3 E o n includes SDP04S60 diode commutation losses 3 Rev. 1.2 Apr-04 Power Semiconductors ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) tr td(off) tf Eon 3 Symbol Conditions Value min. typ. 20 45 120 120 15 28 12 max. - Unit Eoff Eoff V C C = 4 00V, I C = 0. 8A , V G E = 0/ 1 0V , R G = 6 0 , C S n u b b e r = 0n F (C S n u b b e r : S n u bb er c apac it or ) C S n u b b e r = 1nF ns J Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. Unit Reverse diode Characteristic (switching in half bridge configuration with same transistor according to figure C) Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current trr Qrr Irrm di r r / d t trr Qrr Irrm di r r / d t V R = 4 00V, I F = 3A , V G E = 0/ 1 0V , R G = 8 0 V R = 4 00V, I F = 0. 8A, V G E = 0/ 1 0V , R G = 8 0 90 0.27 5.5 300 250 0.75 8 300 ns C A A/s ns C A A/s Power Semiconductors 4 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 10A tp=4s 8s 10A tp=4s 8s IC, COLLECTOR CURRENT 15s 1A 50s 200s 0,1A 1ms DC 0,01A 1V 10V 100V 1000V IC, COLLECTOR CURRENT 15s 1A 50s 200s 0,1A 1ms DC 0,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1: Safe operating area (FullPak) (D = 0, TC = 25C, Tj 150C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2: Safe operating area (Other Packages) (D = 0, TC = 25C, Tj 150C) 30W 6A 25W 20W IC, COLLECTOR CURRENT POWER DISSIPATION Other Packages 4A Other Packages 15W Fullpak 2A 10W Ptot, FullPak 5W 0W 25C 50C 75C 100C 125C 0A 25C 50C 75C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 10V, Tj 150C) Power Semiconductors 5 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 10A 10A 8A 8A V GE =15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 6A 10V 9V 8V 7V 6V 5V V GE =15V 6A 10V 9V 8V 4A 7V 6V 2A 5V 4A 2A 0A 0V 1V 2V 3V 4V 5V 6V 0A 0V 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V -50C 0C 50C Ic=1A Ic=0.5A 100C 150C Ic=3A Ic=4A 8A Tj= +25C +150C IC, COLLECTOR CURRENT 6A 4A 2A 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 10V) Power Semiconductors 6 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 td(off) tf tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns td(off) tr tr td(on) td(on) 10ns 20 40 10ns 0.5A 1.0A 1.5A 2.0A 2.5A 3.0A 60 80 100 120 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, RG = 80, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, IC = 1A, Dynamic test circuit in Figure E) 80J VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 3.4V 70J *) Eon includes losses due to diode recovery. 3.2V E, SWITCHING ENERGY LOSSES 60J 50J 40J 30J 20J 10J 0J 0,5A Eoff 3.0V 2.8V 2.6V 2.4V 2.2V 2.0V -50C 0C 50C 100C 150C Eon* Eoff, C Snubber =1nF 1,0A 1,5A 2,0A 2,5A 3,0A Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 30A) IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, RG = 80, CSnubber=0/1nF Dynamic test circuit in Figure E) Power Semiconductors 7 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 34J 32J 30J 28J 26J 24J 22J 20J 18J 16J 14J 12J 10J 20 40 60 80 100 120 Eoff, C Snubber 35J Eoff *) Eon includes losses due to diode recovery. *) Eon includes losses due to diode recovery. 30J E, SWITCHING ENERGY LOSSES 25J Eoff 20J Eon* 15J Eon* =1nF 10J Eoff, C 5J Snubber =1nF 50C 100C 150C RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, IC = 1A, CSnubber=0/1nF Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+10V, IC = 1A, RG = 80, CSnubber=0/1nF Dynamic test circuit in Figure E) 14V 12V 14V 12V VGE, GATE-EMITTER VOLTAGE 10V 8V 6V 4V 2V 0V 0nC VGE, GATE-EMITTER VOLTAGE 120V 480V 120V 10V 8V 6V 4V 2V 0V 0nC 480V 2nC 4nC 6nC 8nC 10nC 12nC 2nC 4nC 6nC 8nC 10nC 12nC QGE, GATE CHARGE Figure 16. Typical gate charge (IC = 0.8A) QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A) Power Semiconductors 8 Rev. 1.2 Apr-04 ^ 1 ILA03N60, ILP03N60 ILB03N60, ILD03N60 10 K/W 1 ZthJCD, TRANSIENT THERMAL IMPEDANCE ZthJCT, TRANSIENT THERMAL IMPEDANCE 10 K/W 10 K/W 0 R,(K/W) 3.46 0.798 0.662 D=0.5 1.84 0.2 , (s) 3.99 0.368 0.00973 -4 8.52*10 R2 D=0.5 10 K/W 0 R,(K/W) 1.76 2.98 0.620 0.915 R1 , (s) 5.30 1.59 0.0719 0.00654 R2 0.2 0.1 0.05 0.02 0.01 single pulse C 1 = 1 /R 1 C 2 = 2 /R 2 0.1 0.05 0.02 10 K/W -1 R1 0.01 single pulse C 1 = 1 /R 1 C 2 = 2 /R 2 10s 100s 1ms 10ms 100ms 1s 10s 100s 10 K/W 10s 100s 1ms 10ms 100ms -1 1s 10s 100s tp, PULSE WIDTH Figure 18: IGBT transient thermal impedance as a function of pulse width (FullPak) (D = tp / T) tp, PULSE WIDTH Figure 19: Diode transient thermal impedance as a function of pulse width (FullPak) (D = tp / T) 10 K/W 1 10 K/W 0 0.2 0.1 R,(K/W) 1.186 1.856 1.458 ZthJCD, TRANSIENT THERMAL IMPEDANCE ZthJCT, TRANSIENT THERMAL IMPEDANCE D=0.5 , (s) 0.0466 -3 2.220*10 -4 3.616*10 R2 10 K/W 0 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R1 R,(K/W) 0.907 1.088 3.762 4.043 , (s) -2 4.532*10 -3 5.957*10 -4 8.797*10 -4 1.667*10 0.05 10 K/W -1 R1 R2 0.02 0.01 single pulse C 1 = 1 /R 1 C 2 = 2 /R 2 C 1 = 1 /R 1 C 2 = 2 /R 2 10s 100s 1ms 10ms 100ms 1s 10 K/W 10s -1 100s 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 20: IGBT transient thermal impedance as a function of pulse width (Other Packages) (D = tp / T) tp, PULSE WIDTH Figure 21: Diode transient thermal impedance as a function of pulse width (Other Packages) (D = tp / T) Power Semiconductors 9 Rev. 1.2 Apr-04 ^ 4A ILA03N60, ILP03N60 ILB03N60, ILD03N60 1.7V 1.6V 3A IF=4A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 1.5V 1.4V 1.3V 1.2V 1.1V 1.0V IF=2A 2A 150C 100C 1A 25C -55C IF=1A IF=0.5A 0A 0.0V 0.5V 1.0V 1.5V 0.9V -40C 0C 40C 80C 120C VF, FORWARD VOLTAGE Figure 20. Typical diode forward current as a function of forward voltage Tj, JUNCTION TEMPERATURE Figure 21. Typical diode forward voltage as a function of junction temperature 100pF Ciss C, CAPACITANCE 10pF Coss Crss 0V 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) Power Semiconductors 10 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 90 % VG E 10% V GE t VC E 90 % V CE 9 0% VC E 10% V CE td(off) tf td(on) tr 10 % V CE t F igure A. Definition of switching times I,v dIF /dt tr r=tS+ tF Qrr =QS+QF IF tS QS trr tF U I rrm QF 10% Irrm t VR RG 1/2 L D.U.T (IGBT) 1/2 L D.U.T (Diode) C dIrr /dt 90% Irrm Figure B . Definition of diodes switching characteristics Figure C. Dynamic tes t circuit Power Semiconductors 11 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO220-3-31 dimensions symbol min A B C D E F G H K L M N P T 10.37 15.86 0.65 [mm] max 10.63 16.12 0.78 min 0.4084 0.6245 0.0256 [inch] max 0.4184 0.6345 0.0306 2.95 typ. 3.15 6.05 13.47 3.18 0.45 1.23 3.25 6.56 13.73 3.43 0.63 1.36 0.1160 typ. 0.124 0.2384 0.5304 0.125 0.0177 0.0484 0.128 0.2584 0.5404 0.135 0.0247 0.0534 2.54 typ. 4.57 2.57 2.51 4.83 2.83 2.62 0.100 typ. 0.1800 0.1013 0.0990 0.1900 0.1113 0.1030 Please refer to mounting instructions (application note AN-TO220-3-31-01) TO-220AB symbol dimensions [mm] min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72 0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071 Power Semiconductors 12 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 TO-263AB (D2Pak) symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 [mm] max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 min 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157 dimensions [inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 2.54 typ. 5.08 typ. 0.1 typ. 0.2 typ. 15 typ. 0.5906 typ. 8 max 8 max 0.4252 0.0453 0.2453 0.1811 0.3701 0.6358 Power Semiconductors 13 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 TO-252AA (DPak) symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 A B C D [mm] dimensions symbol min 6.40 5.25 (0.65) 0.63 E F G H K L M N P R S T U A B C D Power Semiconductors 14 Rev. 1.2 Apr-04 ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2003 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Rev. 1.2 Apr-04 |
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